The methods used to assess hardness of solar batteries to the effects of ionizing radiation from outer space and to predict active life of solar batteries under given radiation operating conditions are considered. The main features and problematic aspects of the existing practice of solving the problem of assessing the radiation resistance of solar batteries for space applications are highlighted. The ways of solving these problems are proposed.

A comparative analysis of the mechanisms of formation of single radiation effects in products of electronic component base under influence of various types of ionizing radiation is carried out. Criteria are proposed for comparing the conditions for the formation of effects caused by heavy charged particles, and other types of radiation. The directions of development of studies of single radiation effects are considered, taking into account the effectiveness of experiments in laboratory conditions.

A calculation of the near-interface effects of electrification in the region of influence of “dielectric-metal” interfaces of complex geometric shape under the influence of gamma radiation is proposed based on the initial data on the corresponding distributions for flat interfaces obtained by calculation or experimental method. The reliability of the calculations was confirmed experimentally by measuring the displacement currents of the irradiated cylindrical structure.

The paper considers the effect of neutrons on modern designs of two types silicon photovoltaic converters: PERC and HJT. Based on the analysis of the spectra of the external quantum efficiency and the change in the photocurrent density depending on the type and level of irradiation with ionizing radiation, it was found that PERC showed greater radiation resistance: neutrons with a fluence of 6·10¹² cm^-2 – by 11,6 %; 5 MeV electrons with a fluence of 2·10¹⁴ cm^-2 – by 7,9 %; 7 MeV electrons with a fluence of 1·10¹⁴ cm^-2 – by 5,1 %.

It is shown that during pulsed neutron exposure the cross section of single event upsets increases under conditions of a drop in the supply voltage of the microcircuit. Based on experimental data obtained during irradiation of the SRAM in the stationary operating mode of a nuclear reactor, and a computational circuit model of this microcircuit, a computational and experimental assessment of the single event upset cross section in the SRAM under pulsed neutron exposure under conditions of a power supply voltage drop was performed.

The calculation results of local absorbed doses in locations of the on-board equipment of a spacecraft, dedicated for studying the Saturn system, are presented. These values are vital for calculating radiation hardness of instruments and devices on board and setting the requirements for dose hardness of electronic components, used while planning such complex missions.

Measurements of an informative parameter of the on-board radiation dose monitoring system were carried out under conditions of exposure to gamma radiation from a 60Со source under normal climatic conditions and during the annealing process at positive ambient temperatures of 20; 40; 60; 80 и 125 °С. The results obtained are compared with the calibration dependence of the informative parameter on the absorbed dose of ionizing radiation. The dose measurement error was assessed. The results of testing the set of onboard system of radiation dose monitoring made it possible to clarify the range of measurement of the absorbed dose on board the K1 and K2 spacecraft. These changes in the voltage of the sensors showed that only charges on hole traps are annealed, and the charge on surface states is not annealed. The experimental data are in good agreement with the thermal annealing model used.