The spatiotemporal distribution of the density of radiation-generated charge carriers in a locally nonequilibrium diffusion model of the ionization reaction of semiconductor structures from an instantaneous point source located at a given distance from the surface was obtained. For the test geometry, the transient ionization current density was calculated. A comparison is made of the results of modeling transient ionization processes in the locally equilibrium and locally nonequilibrium approximations.

The results of the analysis of a set of test results of the products of electronic component base for hardness to heavy charged particles effect using ion and laser radiation accelerators are presented. A quantitative estimate of the adjustment degree of the sensitivity parameters and electronic component base hardness under joint use of laser radiation has been conducted.

The degradation of power n-MOS transistors is studied under the effect of gamma-irradiation and electrical static discharge (ESD). It is shown that the preliminary gamma-irradiation may lead to raise in hardness of power n-MOS transistors to electrical static discharge. This effect might be connected with the MOS transistor having a “parasite” bipolar transistor in its structure, which enables under the ESD influence, and which amplification factor degrades when exposed to gamma-irradiation. An analytical model of enabling “parasite” bipolar transistor influenced by the ESD pulse, and the dependence of the ESD voltage from absorbed dose under preliminary irradiation.

Photo converters based on GaAs/GaAlAs and GaAs/GaInAs heterogenous junctions are reviewed, intended for operation in various spectral wavelength ranges of optical radiation. Data, following the study results on the effect of neutron and gamma radiation on photo converters performance, is presented. The degree of the degradation of their characteristics post ionizing radiation is demonstrated.

The results of the development of domestic experimental samples of radiation hard photothyristors are shown. The study results of electrical characteristics of the photothyristor GaAs based structures, controlled by light signal with 1 µm wavelength, are presented. The applicability of these structures for commutation of currents by tens of amperes under voltage over 100 V is highlighted.

SRAM latch-up caused by the influence of 14 MeV neutrons and single voltage pulse is studied. Following the results obtained it is shown that SRAM latch-up influenced by neutrons and single voltage pulse bears similarity by several basic parameters, which characterize the latch-up.

The mechanisms of joint manifestation of the effects of radiation-induced glow and radiation-induced absorption in long fiber-optic communication lines under the influence of pulsed ionizing radiation are described. Using the described patterns, a mathematical simulation has been developed that allows one to estimate the light response of an optical fiber with an arbitrary distribution of the exposure level along its length.

The energy spectrum of electron radiation from a subnanosecond accelerator was measured using a semicircular magnetic spectrometer. The spectrometer allows you to record the spectrum of electrons with energies up to 2 MeV with an energy resolution of no worse than 3%.