A phenomenological model is proposed that makes it possible to determine the region of safe operation of high-power MOSFETs under the influence of heavy charged particles of outer space, using the results of a limited amount of tests on ion accelerators.

A technique for designing radiation protection in three-dimensional modeling environment is presented. The technique is designed to solve the inverse problem of calculating local absorbed doses - using the known value of the radiation hardness of on-board equipment or electronic component base products, to create, if necessary, additional radiation protection with a minimum material consumption for these devices. When constructing such protection, the anisotropy of the already existing mass distribution (spacecraft structure, other devices) around a given object on board the spacecraft is taken into account.

ARM-based microcontrollers’ (MC) internal block control method using built-in debugging tools was tried out. Single event upsets (SEU) in memory cells of various functional blocks occurred under 14 MeV and fission neutrons influence were experimentally recorded. SEU sensitivity of MC’s blocks including error correction coding hardened ones was estimated.

Testing results following the study of the latch-up under the influence of 14 MeV neutrons on SRAMs with voltage supply and temperature variation are presented. The conditions for the latch-up to occur in the test samples are determined.

The results following the analysis of the effects of special factors influence on cable products, of experimental research of cable products hardness towards these effects are presented. The propositions on the content of the requirements set to the cable products hardness and to the special factors influence, and their verification, are enunciated. The laid out materials are applicable to cables, wires and electric cords, including: radiofrequency cables, control cables, electric wires and cords, shipboard cables, signal cables and wires, hook-up wires, windings, aircraft wires, ignition wiring, high-voltage and surge wires and cables, resistance alloys cables, composite cables and others, as well as cable assemblies, and screening braids, apart from optic fiber cables, fibers, cables and cable assemblies, which construct contains semiconductor components.

The results of tests developed in recent years by the domestic industry of lithium and lithium-ion chemical current sources of various electrochemical systems for hardness to the effects of special factors, proposals are formulated on the composition of the specified requirements for the hardness of these products to the effects of special factors and their confirmation.