МЕНЮ

Page.
No. 1, 2023
5-9
Hardness Rate Estimation Algorithm for IC Irradiated by Pulsed γ-n Radiation

A.S. Pilipenko, I.A. Illarionova, M.I. Tikhonov

FSUE “Russian Federal Nuclear Center – Academician E.I. Zababakhin
All-Russian Research Institute of Technical Physics”
Snezhinsk, Chelyabinsk region, Russia
e-mail: A.S.Pilipenko@vniitf.ru

Single-event effects’ investigation under neutron influence of various rates and spectrum practical experience based radiation hardness estimation algorithm for single event functional interrupt (SEFI) under pulsed γ-n ionized radiation is proposed. The estimation method is experiment-calculated and allows estimating a radiation hardness rate with relatively small limited experiments’ number. The method assumed the usage of test facilities operating in pulsed and static mode.

Keywords: single event upsets, complex IC, experiment-calculated method, SEFI, pulsed γ-n radiation
10-15
Simulation of Failures in ICs under Pulsed Neutron Exposure. Part 3. Medium Intensity Area

A.I. Chumakov1,2, D.V. Bobrovsky1,2, A.A. Smolin1,2, D.O. Titovets1,2,A.V. Yanenko1,2, S.Yu. Diankov3, K.A. Chumakov4, O.A. Gerasimchuk1

1National Research Nuclear University “MEPhl”
2JSC "Experimental Scientific and Production Association Specialized Electronic Systems"
Moscow, Russia
e-mail: dotit@spels.ru
3SRSI "46 Central Research Institute" of the Ministry of Defense of Russian Federation
Moscow, Russia
4FSI “FRC Research Institute of System Research of the Russian Academy of Science”
Moscow, Russia

The conditions for failures to occur in the medium intensity area, which is transitional: from the area of dose rate effects to the effects of single event upsets (SEU), are analyzed. It is shown that in this region there are single radiation effects against the background of the flow of significant ionization currents. The latter affect the condition for the occurrence of single event upsets due to changes in the modes of operation of the elements inside the ICs.

Keywords: IC failures, pulsed neutron radiation, ionization reaction, bulk ionization, SEU, simulation, integrated ionization reaction, medium intensity area.
16-21
Influence of Operation Temperature on Output Power of a Laser Diode Irradiated by Neutrons in Various Connection Schemes

O.V. Tkachev, S.M. Dubrovskikh, A.S. Kustov, I.A. Ivanova

FSUE “Russian Federal Nuclear Center – Academician E.I. Zababakhin All-Russian Research Institute of Technical Physics”
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru

The results of the radiation response of semiconductor laser diodes emitting at a wavelength of 965 nm are presented for varying temperature modes and the scheme for connecting the laser to a power source. The effect of interruption of laser generation under neutron irradiation is considered; the effect is due to additional heating of the laser caused by a decrease in the laser efficiency.

Keywords: laser diode, threshold current, current-voltage characteristics, watt-ampere characteristics, neutron fluence, power output.
22-30
Propagation of Photobleaching Front in Extended Optical Environment with Variation of Parameters of Optical Radiation Stimulation

A.A. Konovalov, S.M. Dubrovskikh, O.V. Tkachev

FSUE “Russian Federal Nuclear Center – Academician E.I. Zababakhin
All-Russian Research Institute of Technical Physics”
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru

The features of photostimulated annealing in extended fields, namely, the process of propagation of the photobleaching front in gamma irradiated quartz and polymer fibers, are considered. The influence of the wavelength, probing radiation power, and gamma radiation dose on the parameters of the photobleaching front has been studied.

Keywords: optical fiber, ionizing radiation, exposure dose of gamma radiation, radiation induced absorption, radiation color centers, photobleaching front, photostimulated annealing, probing radiation.
31-37
Recalculating Indicators of Electronic Component Base Hardness to the Exposure of Heavy Charged Particles for Real-Time Use

G.A. Protopopov, P.A. Chubunov, I.V. Skorkin

JSC “Research Institute of Space Instrumentation”
Moscow, Russia
e-mail: Protopopov_GA@orkkniikp.ru

The results of the analysis of the possibility of recalculating the hardness indicators of the electronic component base to the effects of ionizing radiation of outer space based on single radiation effects for an arbitrary orbit are presented.

Keywords: ionizing radiation of outer space, single radiation effects, radiation hardness, radiation environment, heavy charged particles, electronic component base.
38-42
On the Possibility of Extending the Service Life of Instruments for Measuring the Dynamic Characteristics of Pulsed Bremsstrahlung after the End of Their Appointed Service Life

I.A. Busygina, Yu.S. Loyko, P.V. Moskvich, A.V. Kirillov

JSC ?Research Institute of Scientific Instruments”
Lytkarino, Moscow region, Russia
e-mail: IABusygina@niipribor.ru

The possibility of extending the service life of measuring instruments for the dynamic characteristics of pulsed bremsstrahlung fields is determined. A number of experiments were carried out on the ARSA and RIUS-5 units, confirming the persistence of the main standardized metrological characteristic of dynamic measuring instruments after 10 years of operation. The metrological characteristics of dynamic measuring instruments of JSC "RISI" were studied during their commissioning and after 10 years of application. The persistence of the main normalized metrological characteristic - the dose sensitivity of means for measuring dynamic characteristics (SD2, SKD1, DPPD1, DPPD2, DAP1) was confirmed. Thus, in accordance with GOST RV 0015-702-2019 "The Procedure for Establishing and Extending the Assigned Resource, Service Life, Storage Period", the possibility of extending the service life of dynamic characteristics measuring instruments of JSC “RISI” was determined.

Keywords: dynamic detectors, accelerators, dynamic characteristics, dose sensitivity, effective duration, dose load, service life, diamond detectors, semiconductor detectors, silicon detectors.


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