The current capabilities of pulsed electron accelerators LIU-10, RIUS-5, UIN-10M for testing products of the electronic component base for resistance to the effects of pulsed ionizing radiation are shown. On the ex-ample of the results obtained on the LIA-10, RIUS-5 and UIN-10M accelerators for the pulsed response of the diode structure, a meth-od is presented for modeling the response of electronic component base prod-ucts to the impact of pulsed ionizing radiation, taking into account the amplitude-time characteristics of the impact.

The results of studies of the spectral sensitivity of photodiodes based on Si and GaAs semiconductor materials under neutron irradiation are presented. It has been found that for photodiodes based on indirect-gap semiconductors (Si) a stronger degradation of the long-wavelength part of the spectral characteristic is observed, and for photodiodes based on direct-gap semiconductors (GaAs) there is a uniform degradation of photosensitivity in the entire spectral range. The model representations considered in the work make it possible to describe the effect of neutron irradiation on the spectral characteristics of samples, taking into account the electrical modes of their inclusion. The results of the work can be applied in the design of radiation-resistant optocouplers.

The impact of neutron flux on cross-section of single radiation effects in power MOS transistors is studied. It is demonstrated that with neutron flux over 10¹⁵ n./(cm²·с) the cross-section grows. The analysis made in the article shows that the growth of the radiation effect cross-section with neutron flux increase may be conditioned by multi-neutron interaction of radiation with the active region of the transistor.

The frequency spectra of the specific energy of charge formed in semiconductor crystals of microelectronics in modern spacecraft as a result of nuclear reactions were studied. As one of the main causes of failures in microelectronics, the Bragg peak is considered, which is observed in almost all frequency spectra obtained by means of CCD and CMOS array detectors. The necessity of developing algorithms that allow identifying broken pixels to be restored is touched upon.

The results of the calculating the spectra of fluxes of ionizing radiation from outer space and absorbed doses in silicon behind spherical aluminum shields during the flight to Saturn and the operation of a spacecraft in the planetary system. The obtained results are compared with the typical values of dose loads behind similar shieldings in the geostationary orbit and the Molniya-type orbit. On the basis of dose calculations, a preliminary estimate of the radiation resistance value based on the dose effect of the electronic component base used in the creation of on-board equipment was made.

The article presents the results of calculating the equivalent fluences and non-ionization dose from protons, electrons and neutrons of outer space during the flight of a spacecraft in a Molniya-type orbit. These parameters characterize the non-ionization interaction of energetic particles with the materials of modern integrated circuits, the so-called displacement effects or structural damage. The obtained results are compared with typical values of the resistance of electronic component base products to structural damage, and an assessment is made of the mass protection values at which displacement effects cannot be neglected.